| PART |
Description |
Maker |
| IS43R16320A-6TL IS43R16320A |
32Meg x 16 512-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| V58C2256164S V58C2256164SXT6 V58C2256164SXT7 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|
| HYI25DC512800CE HYI25DC512160CE HYI25DC512160CE-5 |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
| HYB18T512160AF-37 HYB18T512400AC-37 HYB18T512400AC |
512-Mbit Double-Data-Rate-Two SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB18T512160AF-5 HYB18T512400AF HYB18T512400AF-3 H |
512-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| HYB25D512160BTL-6 HYB25D512800BC-5 HYB25D512800BC- |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
| HYB18T512160B2F-2.5 HYB18T512160B2F-25F HYB18T5121 |
512-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| V58C365164S |
64 Mbit DDR SDRAM 4M X 16, 3.3VOLT
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
|
| V58C365164S |
64 Mbit DDR SDRAM 4M X 16/ 3.3VOLT
|
Mosel Vitelic Corp
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS43R16800A1-5TL IS43R16800A1 |
8Meg x 16 128-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
